Simon Fafard


Simon Fafard
Adjunct Professor

Office: (613) 282-5258
Work E-mail:



Epitaxy, III-V optoelectronic properties, material and device characterization, photonics

Selected publications:
  • S. Fafard. Apparatus and method to characterize multijunction photovoltaic solar cells. US patent 8,190,386, 2012
  • S. Fafard. Solar cell with epitaxially grown quantum dot material. USpatent - 7,863,516, 2011
  • M. Bayer, P. Hawrylak, K. Hinzer, S. Fafard, M. Korkusinski, Z. R. Wasilewski, O. Stern, A. Forchel. Coupling and Entangling of Quantum States in Quantum Dot Molecules. SCIENCE 291, 451, 2001
  • M. Bayer, O. Stern, P. Hawrylak, S.Fafard, A. Forchel. Hidden symmetries in the energy levels of excitonic artificial atoms. Nature 405, 923, 2000
  • S. Fafard, Z. R. Wasilewski, C. Nì. Allen, D. Picard, M. Spanner, J.P. McCaffrey, P.G. Piva. Manipulating the Energy Levels of Semiconductor Quantum Dots. Phys. Rev. B 59, 15368, 1999

Fields of Interest

  • Semiconductors
  • Nanostructures
  • Photonics
  • Optoelectronics
  • Solar Cells
  • Quantum Dots
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